G040P04T

$2.24

Description：MOSFET P-CH 40V 222A TO-220
Series：-
Mfr：Goford Semiconductor
Package：Tube

SKU:8acbdeb83a49 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G040P04T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET P-CH 40V 222A TO-220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G040P04T

Description：MOSFET P-CH 40V 222A TO-220
Series：-
Mfr：Goford Semiconductor
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：206 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：15087 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：312W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for G040P04T

G040P04T

Single FETs, MOSFETs Overview

The G040P04T is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a -40V drain-source voltage rating and supports a continuous drain current of -180A at 25°C case temperature. Key electrical parameters include an on-resistance of less than 3.7mΩ at VGS=-10V and less than 5mΩ at VGS=-4.5V. It is housed in a TO-220 package with a maximum power dissipation of 178W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for excellent RDS(ON) and low gate charge
100% avalanche tested for rugged performance
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch applications
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering information against official manufacturer documentation before procurement. Confirm that the TO-220 packaging details, including marking and quantity per tube, align with project requirements. Ensure compliance with RoHS standards and check for any specific handling or storage instructions provided in the datasheet to maintain component integrity during assembly.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling up to 180A with low conduction losses. Consider the thermal resistance values (RthJA of 50°C/W and RthJC of 0.7°C/W) for adequate heat sinking. Verify that the gate drive voltage meets the threshold requirements for optimal on-resistance performance, particularly if operating at lower gate voltages such as -4.5V.

Single FETs, MOSFETs Part Context

This part belongs to the family of P-Channel Enhancement Mode Power MOSFETs from Goford Semiconductor. These devices are designed for general-purpose switching applications where efficiency and current capacity are critical. The use of trench technology distinguishes these components by offering improved switching characteristics compared to older planar technologies.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Ensure any replacement matches the -40V VDS rating, -180A ID capability, and TO-220 package form factor. Verify pinout compatibility and thermal characteristics to ensure seamless integration without circuit redesign.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the G040P04T?

The maximum pulsed drain current (IDM) is specified as -720 A.

Is the G040P04T suitable for high-frequency switching?

Yes, it features low gate charge (Qg typ 206 nC) and optimized switching times, making it suitable for high-frequency applications like DC/DC converters.