G09N06S2

$1.37

Description：MOSFET 2N-CH 60V 9A 8SOP
Series：-

SKU:36bf5d8b655f Category: FET, MOSFET Arrays Brand: Goford Semiconductor

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Product introduction

G09N06S2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET 2N-CH 60V 9A 8SOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for G09N06S2

Description：MOSFET 2N-CH 60V 9A 8SOP
Series：-
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：9A (Tc)
Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：2180pF @ 30V
Power - Max：2.6W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for G09N06S2

G09N06S2

FET, MOSFET Arrays Overview

The G09N06S2 is a dual N-channel trench MOSFET manufactured by Goford Semiconductor. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 9A at VGS = 10V. The device offers an on-resistance (RDS(on)) of less than 18mΩ at VGS = 10V and less than 20mΩ at VGS = 4.5V. Packaged in SOP-8, it includes two identical low-side and high-side switches within a single component.

FET, MOSFET Arrays Feature Summary

Advanced trench technology providing excellent RDS(ON) and low gate charge characteristics.
Dual configuration containing two identical N-channel switches for high-side and low-side applications.
100% avalanche tested to ensure robustness against transient energy events.

FET, MOSFET Arrays Applications

Power switch circuits
DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific package marking 'G09N06' and the SOP-8 dual configuration when sourcing. Confirm RoHS compliance status with the supplier. Ensure thermal management aligns with the specified junction-to-ambient resistance of 48°C/W for reliable operation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring two matched N-channel switches in a compact footprint. The low gate charge supports efficient switching in DC/DC applications. Verify that the 60V rating meets the system's maximum voltage requirements and that the 9A current capacity suits the load profile.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of advanced trench MOSFETs designed for power switching applications. The dual configuration simplifies circuit design by integrating two switches into one package, reducing board space compared to using discrete single devices.