G110N06K

$1.70

Description：N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f46d904b296a Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G110N06K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is N60V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G110N06K

Description：N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.4mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：113 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5538 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：160W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for G110N06K

G110N06K

Single FETs, MOSFETs Overview

The G110N06K is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a drain-source voltage of 60V and a continuous drain current of 110A at 25°C case temperature. On-resistance is specified as less than 6.4mΩ at VGS=10V and less than 8.4mΩ at VGS=4.5V, both tested at ID=20A. It is housed in a TO-252 package with a maximum power dissipation of 160W and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for excellent RDS(ON) and low gate charge
100% avalanche tested for enhanced reliability
Epoxy meets UL 94 V-0 flammability rating

Single FETs, MOSFETs Applications

Power switch
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (A1416.83-V1.2) matches your design requirements. Confirm that the TO-252 packaging aligns with your PCB footprint and thermal management strategy. Ensure the 60V rating provides sufficient margin for your circuit's peak voltage conditions. Check RoHS compliance documentation if required for your manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling up to 110A is required in a TO-252 package. The low RDS(ON) values at both 10V and 4.5V drive voltages make it suitable for various logic-level and standard gate drive applications. Consider the 160W power dissipation capability and thermal resistance values for heatsinking requirements in your system design.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor N-Channel Enhancement Mode Power MOSFET lineup. It is designed for general-purpose power switching applications requiring robust performance. The TO-252 package offers a balance between power handling capacity and surface-mount convenience. It is distinct from lower voltage or smaller package variants within the manufacturer's portfolio.