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G15N10C is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 100V 22A TO-252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for G15N10C
- Description：MOSFET N-CH 100V 22A TO-252
- Series：TrenchFET®
- Mfr：Goford Semiconductor
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：90mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：55W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for G15N10C
Single FETs, MOSFETs Overview
The G15N10C is an N-channel enhancement mode power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 100V and a continuous drain current of 22A at VGS=10V. At VGS=10V, the maximum on-resistance is 90mΩ, while it remains below 100mΩ at VGS=4.5V. Packaged in TO-252, it supports a power dissipation of 55W and operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Advanced trench technology for optimized performance
- Low gate charge characteristics
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- Power switch applications
- DC/DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific package marking and reel quantity against the manufacturer's ordering information before procurement. Confirm RoHS compliance status as documented in the official datasheet. Ensure thermal management requirements align with the specified junction-to-case thermal resistance values during integration planning.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring a 100V rated N-channel MOSFET with high current handling capabilities. Consider the TO-252 package dimensions for PCB layout compatibility. Evaluate the gate charge specifications against driver capabilities to ensure efficient switching performance in DC/DC converter topologies.
Single FETs, MOSFETs Part Context
This part belongs to the Goford Semiconductor power MOSFET portfolio, specifically designed for general-purpose switching applications. It represents a standard enhancement mode device utilizing trench architecture to balance conduction losses and switching speeds effectively.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists from Goford Semiconductor for verified alternatives. Cross-reference pinouts and electrical ratings carefully if considering third-party equivalents.
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