G200P04D3

$0.70

Description：P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ded1e2a94a43 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G200P04D3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is P-40V,-20A,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G200P04D3

Description：P-40V,-20A,RD(MAX)<75M@-10V,VTH-
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2662 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (3.15x3.05)
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for G200P04D3

G200P04D3

Single FETs, MOSFETs Overview

The G200P04D3 is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device features a -40V drain-source voltage rating and supports a continuous drain current of -20A at VGS = -10V. On-resistance is specified as less than 16mΩ at VGS = -10V and less than 20mΩ at VGS = -4.5V. It is housed in a DFN3X3-8L surface-mount package with a maximum power dissipation of 30W.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for excellent RDS(ON) and low gate charge
100% avalanche tested for enhanced reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switch
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and marking. Confirm that the DFN3X3-8L footprint matches the target PCB design. Check RoHS compliance status if required by local regulations. Ensure thermal management meets the junction-to-case resistance requirements during operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact power switching solutions with high efficiency. The low gate charge facilitates simplified driving circuits, while the robust avalanche rating supports inductive load handling. Evaluate thermal performance based on the 55°C/W junction-to-ambient resistance for ambient cooling scenarios.

Single FETs, MOSFETs Part Context

This part belongs to Goford Semiconductor's P-Channel MOSFET lineup designed for general-purpose power management. The DFN3X3-8L package allows for space-constrained designs compared to traditional SO-8 or TO-220 packages. It serves as a direct replacement for legacy components in similar voltage and current classes within consumer and industrial electronics.