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G3F09MT12GB4 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is 1200V 9M FULL-BRIDGE SICPAK G SI. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for G3F09MT12GB4
- Description：1200V 9M FULL-BRIDGE SICPAK G SI
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for G3F09MT12GB4
FET, MOSFET Arrays Overview
The G3F09MT12GB4 is a silicon carbide (SiC) MOSFET module manufactured by GeneSiC Semiconductor, part of the SiCPAK F series. It features a full-bridge configuration with four N-channel devices in a single package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 1.2 kV and a maximum on-resistance (Rds(on)) of 12.5 mOhms. The module supports a continuous drain current (Id) of 104 A and operates within a junction temperature range of -40°C to +175°C. It utilizes press-fit installation for secure mounting.
FET, MOSFET Arrays Feature Summary
- Full-bridge topology integrating four SiC MOSFETs for compact power conversion designs
- Low on-resistance characteristics enabling high-efficiency energy transfer
- Press-fit termination method ensuring robust mechanical connection without soldering
FET, MOSFET Arrays Applications
- High-frequency DC-DC converters
- Motor drive inverters
- Uninterruptible power supplies (UPS)
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'B4' against the official datasheet to confirm terminal configuration and thermal interface material specifications. Ensure compatibility with press-fit tooling requirements. Confirm RoHS compliance status through the manufacturer's latest documentation before integration into regulated equipment.
FET, MOSFET Arrays Selection Notes
Select this module when a pre-configured full-bridge arrangement is required to minimize board space and parasitic inductance. The 1.2 kV rating suits medium-voltage applications. Compare the 12.5 mOhm Rds(on) against system loss budgets. Consider the SiCPAK form factor for thermal management strategies involving direct cold plate contact.
FET, MOSFET Arrays Part Context
This component belongs to the GeneSiC G3F series, utilizing trench-assisted planar (TAP) technology. The SiCPAK packaging format is designed for high-power density applications, offering superior thermal performance compared to traditional discrete modules. The series targets next-generation power electronics requiring high switching speeds and low conduction losses.
FET, MOSFET Arrays Replacement Considerations
Direct replacements must match the 1.2 kV voltage rating, full-bridge configuration, and SiCPAK footprint. Verify that alternative modules offer comparable Rds(on) and thermal resistance values. Ensure the replacement supports press-fit assembly if the existing design relies on this mounting method.
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