G6N90F

$1.49

Description：MOSFET N-CH 900V 6A 69W 3(MAX) T
Series：Trench
Mfr：Goford Semiconductor
Package：Tube

SKU:ff351be9c98c Category: Single FETs, MOSFETs Brand: Goford Semiconductor

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

G6N90F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is MOSFET N-CH 900V 6A 69W 3(MAX) T. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G6N90F

Description：MOSFET N-CH 900V 6A 69W 3(MAX) T
Series：Trench
Mfr：Goford Semiconductor
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：20V
Input Capacitance (Ciss) (Max) @ Vds：1060 pF @ 450 V
FET Feature：-
Power Dissipation (Max)：69W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for G6N90F

G6N90F

Single FETs, MOSFETs Overview

The G6N90F is an N-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It features a drain-source voltage (VDS) of 900 V and a continuous drain current (ID) of 6 A at 25°C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 3 Ω at VGS = 10 V and ID = 3 A. Key dynamic parameters include a total gate charge (Qg) of 25 nC, input capacitance (Ciss) of 1060 pF, and reverse recovery time (Trr) of 1200 ns. It operates within a junction temperature range of -55°C to 150°C and provides superior switching performance with high avalanche energy strength.

Single FETs, MOSFETs Feature Summary

Optimized on-state resistance for high efficiency switch mode power supplies
Superior switching performance and higher avalanche energy strength
100% avalanche tested for enhanced reliability

Single FETs, MOSFETs Applications

Power switch
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific package marking 'G6N90' and packaging format (50pcs/Tube) against your Bill of Materials. Confirm RoHS compliance status matches your environmental requirements. Ensure thermal management design accounts for the specified RthJA and RthJC values to maintain safe operating temperatures during operation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability up to 900 V. Consider the 6 A continuous current rating and 3 Ω RDS(on) for moderate power switching needs. Evaluate the thermal resistance characteristics and ensure adequate heat sinking or PCB layout strategies are implemented to manage power dissipation effectively under load conditions.

Single FETs, MOSFETs Part Context

This device belongs to an advanced MOSFET family designed for high-voltage applications. It utilizes enhancement mode technology to provide reliable switching in demanding environments. The TO-220F package facilitates through-hole mounting, offering robust mechanical stability and efficient thermal transfer capabilities compared to smaller surface-mount alternatives.