GA03JT12-247

Overview

The GA03JT12-247 is a Silicon Carbide (SiC) Junction Transistor manufactured by GeneSiC Semiconductor. It features a Drain-Source Breakdown Voltage (Vdss) of 1200 V at 25°C and supports a Continuous Drain Current (Id) of 3 A at a case temperature of 95°C. The device has a maximum on-resistance (Rds On) of 460 mOhms at 3 A. It is designed for through-hole mounting in a TO-247AB package, with a maximum power dissipation of 15 W at the case temperature and an operating junction temperature up to 175°C.

Feature Summary

• Utilizes Silicon Carbide technology for high-voltage operation.

Applications

Procurement Notes

Verify the manufacturer designation carefully, as some listings may incorrectly attribute this component to other entities. Confirm the specific suffix indicates the standard TO-247AB through-hole package. Ensure the source provides official datasheets confirming the 1200 V rating and SiC construction before procurement.

Selection Notes

Select this component for applications requiring robust high-voltage switching capabilities within a through-hole form factor. The 1200 V breakdown voltage suits medium-to-high voltage circuits. Consider the thermal constraints, as the current rating is specified at a specific case temperature, necessitating adequate heatsinking for sustained operation.

Part Context

This part belongs to the GeneSiC Semiconductor lineup of Silicon Carbide junction transistors. These devices are engineered to replace traditional silicon MOSFETs in high-efficiency, high-temperature environments. The TO-247AB package provides a standardized mechanical interface for through-hole PCB mounting, facilitating integration into existing industrial designs.

Replacement Considerations

No official substitute part numbers are documented for this specific model. When evaluating alternatives, ensure the replacement matches the 1200 V drain-source breakdown voltage and maintains compatibility with the TO-247AB through-hole footprint. Verify that any cross-reference also utilizes Silicon Carbide technology to preserve thermal performance characteristics.