GA040TH65-227SP

$1,275.00

Description：MOD THYRISTOR CUSTOM SOT227
Series：-

SKU:770519daa184 Category: SCRs - Modules Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOD THYRISTOR CUSTOM SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Structure：Single
Number of SCRs, Diodes：1 SCR
Voltage - Off State：6.5 kV
Current - On State (It (AV)) (Max)：40 A
Current - On State (It (RMS)) (Max)：69 A
Current - Non Rep. Surge 50, 60Hz (Itsm)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Voltage - Gate Trigger (Vgt) (Max)：-
Current - Gate Trigger (Igt) (Max)：30 mA
Current - Hold (Ih) (Max)：780 mA
Grade：-
Qualification：-

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GA040TH65-227SP

Overview

The GA040TH65-227SP is a Silicon Carbide (SiC) NPNP thyristor manufactured by GeneSiC Semiconductor. It features a maximum repetitive peak forward voltage of 6500 V and a maximum average on-state current of 40 A at a case temperature of 120 °C. The RMS on-state current rating is 69 A under the same thermal conditions. The device operates within a junction and storage temperature range of -55 °C to +150 °C. Electrical characteristics include a typical maximum peak on-state voltage of 3.90 V, a gate trigger current of 30 mA, and a holding current of 780 mA. The package form factor is SOT-227 (ISOTOP), with a weight of 30 g.

Feature Summary

Asymmetric SiC NPNP thyristor structure designed for high-voltage applications
Robust compact fully soldered package with ISOTOP base plate form factor
Fast turn-on characteristics with low reverse recovery charge relative to on-state current
Capable of operation at elevated temperatures up to 150 °C

Applications

Grid Tied Solar Inverters
Wind Power Inverters
HVDC Power Conversion
Utility Scale Power Conversion
Trigger Circuits/Ignition Circuits

Procurement Notes

Verify the specific part number suffix against official GeneSiC documentation to confirm exact electrical tolerances and packaging variations. Confirm that the component meets all necessary safety standards for the intended high-voltage application environment before integration.

Selection Notes

Select this component based on its 6500 V blocking capability and 40 A continuous current rating. Ensure the cooling system maintains the case temperature below 120 °C to sustain rated currents. Evaluate the thermal resistance of 0.21 °C/W for heat sink design requirements.

Part Context

This component belongs to the GeneSiC Semiconductor silicon carbide thyristor family. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices in high-power conversion systems.