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Product Detailed Parameters
- Description：TRANS SJT 100V 9A TO46
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：100 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：5.8 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：547pF @ 100V
- Resistance - RDS(On)：240 mOhms
- Power - Max：20 W
- Operating Temperature：210°C
- Mounting Type：Through Hole
- Package / Case：TO-206AB, TO-46-3 Metal Can
- Supplier Device Package：TO-46
- Grade：-
- Qualification：-
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Overview
The GA05JT01-46 is a normally-off Silicon Carbide Junction Transistor (SJT) manufactured by GeneSiC Semiconductor. It features a TO-46 package and supports a maximum operating temperature of 210°C. Key electrical parameters include a Drain-Source Voltage (VDS) of 100 V, a Continuous Drain Current (ID) of 5.8 A at Tj=210°C, and an On-State Resistance (RDS(ON)) of 240 mΩ at 25°C. The device exhibits a DC Current Gain (hFE) of 113 at 25°C and requires positive gate current for turn-on. It offers >20 µs short-circuit withstand capability and is compatible with 5 V TTL gate drive.
Feature Summary
- Gate Oxide Free SiC Switch design
- Exceptional Safe Operating Area
- Excellent Gain Linearity
- Compatible with 5 V TTL Gate Drive
Applications
- Down Hole Oil Drilling
- Geothermal Instrumentation
- Solenoid Actuators
- General Purpose High-Temperature Switching
- Amplifiers
Procurement Notes
Verify the specific revision history against the Dec 2014 datasheet to ensure component accuracy. Confirm that the TO-46 package dimensions match your mechanical constraints. Ensure your gate drive circuitry can supply the required steady-state gate current for proper operation. Check for any RoHS compliance documentation if required for your assembly process.
Selection Notes
Select this component for high-temperature environments up to 210°C where standard silicon devices fail. Consider the 100 V rating and 5.8 A continuous current limits for load matching. Evaluate the need for proportional or boost capacitor drive topologies to optimize switching speed and minimize gate drive power consumption during operation.
Part Context
This part belongs to the GeneSiC Semiconductor high-temperature Silicon Carbide Junction Transistor family. It utilizes a unique junction transistor technology rather than traditional MOSFET structures, offering distinct thermal stability and gain characteristics suitable for extreme conditions.
Replacement Considerations
No official substitutes are listed in the datasheet. When evaluating alternatives, verify that the replacement device maintains compatibility with the required 210°C operating temperature and matches the TO-46 package outline. Ensure the alternative supports similar gate drive requirements for current-controlled turn-on.
FAQ
How is the GA05JT01-46 turned on?
It is a current-controlled device that requires a positive gate current to turn on and remain in the on-state.
What is the maximum short-circuit withstand time?
The device has a short-circuit withstand capability of greater than 20 microseconds.
Can it be driven directly by 5 V logic?
Yes, it is compatible with 5 V TTL gate drive, typically requiring a simple current amplification stage.
