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Product Detailed Parameters
- Description：TRANS SJT 1200V 5A TO247AB
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：1.2 kV
- Current - Drain (Idss) @ Vds (Vgs=0)：100 nA @ 1.2 kV
- Current Drain (Id) - Max：15 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：668pF @ 800V
- Resistance - RDS(On)：180 mOhms
- Power - Max：106 W
- Operating Temperature：175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GA05JT12-247 is a Silicon Carbide (SiC) N-Channel enhancement mode MOSFET manufactured by GeneSiC Semiconductor. It features a drain-source breakdown voltage of 1200 V and a continuous drain current rating of 15 A at case temperature. The device exhibits a maximum on-resistance of 180 mΩ at 10 A. Designed for through-hole mounting in a TO-263-7 package, it supports a junction operating temperature up to 175°C with a power dissipation capacity of 106 W.
Feature Summary
- Utilizes Silicon Carbide technology for high thermal stability and efficiency
- Enhancement mode normally-off operation ensures safe default state
- Single-channel configuration optimized for compact circuit designs
Applications
- High-frequency power switching circuits
- DC-DC converter topologies requiring low conduction losses
- Industrial motor drive systems
Procurement Notes
Verify the specific suffix against official GeneSiC documentation to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides traceable datasheets matching the TO-263-7 package variant. Cross-reference manufacturer lot codes to validate authenticity and production date codes prior to integration into critical hardware assemblies.
Selection Notes
Select this component when applications demand high-voltage handling with minimal switching losses. Compare the 180 mΩ on-resistance against system thermal constraints to determine adequate heatsinking requirements. Evaluate the 15 A current rating against peak load demands to ensure reliable operation within the specified 175°C junction temperature limit without derating issues.
Part Context
This part belongs to the GeneSiC GA series of wide-bandgap semiconductors. It complements other models like the GA05JT12-263, which shares similar electrical characteristics but utilizes a surface-mount package. The series targets high-efficiency power conversion applications where traditional silicon devices face performance limitations due to thermal resistance.
Replacement Considerations
Direct replacements must match the 1200 V rating, 15 A current capacity, and TO-263-7 footprint. Verify that substitute SiC MOSFETs maintain comparable gate charge specifications to preserve switching speed. Confirm thermal management requirements align with the replacement's power dissipation ratings.
