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GA060TH65-227SP
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Product Detailed Parameters
- Description：MOD THYRISTOR CUSTOM SOT227
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：6.5 kV
- Current - On State (It (AV)) (Max)：60 A
- Current - On State (It (RMS)) (Max)：104 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：100 mA
- Current - Hold (Ih) (Max)：-
- Grade：-
- Qualification：-
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Overview
The GA060TH65-227SP is a Silicon Carbide (SiC) NPNP thyristor module rated for a repetitive peak forward voltage of 6500 V and a maximum average on-state current of 60 A. It features an RMS on-state current capacity of 104 A at a case temperature of 120 °C, with a power dissipation rating of 919 W. The device operates within a junction and storage temperature range of -55 °C to +150 °C. Electrical characteristics include a gate trigger current of -100 mA, a typical maximum peak on-state voltage of 3.90 V, and a thermal resistance from junction to case of 0.136 °C/W. The component utilizes a robust SOT-227 (ISOTOP) base plate form factor.
Feature Summary
- Asymmetric SiC NPNP thyristor architecture designed for high-voltage blocking capabilities up to 6500 V.
- Robust compact fully soldered package construction ensuring mechanical stability in demanding environments.
- Fast turn-on characteristics combined with industry-leading low reverse recovery charge relative to on-state current.
- SOT-227 (ISOTOP) base plate form factor optimized for efficient heat transfer and mounting.
Applications
- Grid-tied solar inverters
- Wind power inverters
- HVDC power conversion systems
- Utility-scale power conversion
- Trigger circuits and ignition circuits
Procurement Notes
Verify the specific ordering suffix against official GeneSiC Semiconductor documentation to confirm exact electrical tolerances and packaging variations. Confirm availability status as distribution channels may list this component as discontinued or limited supply. Ensure compliance with RoHS requirements by checking the detailed certification data provided in the manufacturer's specification sheet before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high-voltage blocking capability and fast switching speeds in harsh thermal environments. Evaluate the thermal resistance and derating curves to ensure adequate heat sinking for the intended RMS current load. Verify that the gate trigger current requirements align with the available drive circuitry. Consider the asymmetric reverse voltage rating when designing circuits exposed to transient reverse voltages.
Part Context
This part belongs to the GeneSiC Semiconductor silicon carbide thyristor family, specifically engineered for high-power industrial applications. The GA060TH65 series represents a generation of devices utilizing advanced SiC material properties to achieve superior performance compared to traditional silicon counterparts. The ISOTOP package design is standard for high-current modules in the utility and renewable energy sectors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the verified source material. Designers should consult official GeneSiC Semiconductor documentation for potential cross-references or updated product line replacements.
