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Product Detailed Parameters
- Description：IGBT MOD 600V 200A 500W SOT227B
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：-
- IGBT Type：-
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 100A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227B
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：200 A
- Power - Max：500 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：16.5 nF @ 30 V
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Overview
The GA200SA60U is an Ultra-Fast Speed IGBT in a SOT-227 insulated package. It features a collector-to-emitter breakdown voltage of 600 V and a continuous collector current of 200 A at 25°C case temperature, reducing to 100 A at 100°C. The device has a typical saturation voltage of 1.60 V at 100 A and 15 V gate drive. Maximum power dissipation is 500 W at 25°C and 200 W at 100°C. Junction temperature ranges from -55°C to +150°C. Internal emitter inductance is typically ≤ 5 nH, and the isolation voltage is 2500 V RMS.
Feature Summary
- Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching or > 200 kHz in resonant mode.
- Fully isolated package providing 2,500 Volt AC/RMS isolation between terminals and case.
- Very low internal inductance (≤ 5 nH typ.) designed for lower EMI and reduced snubbing requirements.
- Industry standard outline plug-in compatible with other SOT-227 packages for easy assembly and paralleling.
Applications
- Uninterruptible Power Supplies (UPS)
- Switched Mode Power Supplies (SMPS)
- Welding equipment
- Induction heating systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision and ordering suffixes match specific application requirements. Ensure thermal interface materials are compatible with the specified junction-to-case thermal resistance values during installation.
Selection Notes
Select based on required switching frequency and thermal management capabilities. Consider the reduction in continuous current rating as case temperature increases above 25°C. Verify gate drive voltage compatibility with the specified threshold and saturation characteristics for optimal performance.
Part Context
This component belongs to the Ultra-Fast Speed IGBT series manufactured by Vishay General Semiconductor - Diodes Division. It utilizes Silicon technology housed in an insulated SOT-227 package designed for high-power industrial applications requiring fast switching and electrical isolation.
Replacement Considerations
Direct pin-compatible substitutes within the SOT-227 form factor should be evaluated for matching VCES, IC ratings, and switching speeds. Verify thermal resistance and isolation voltage specifications align with existing design constraints before substitution.
FAQ
What is the maximum clamped inductive load current?
The maximum clamped inductive load current (ILM) is 400 A under test conditions of VCC = 80% VCES, VGE = 20V, L = 10µH, and RG = 2.0Ω.
How does the continuous collector current change with case temperature?
The continuous collector current is rated at 200 A at a case temperature of 25°C and decreases to 100 A at a case temperature of 100°C.
What is the typical reverse voltage avalanche energy?
The typical reverse voltage avalanche energy (EARV) is 160 mJ.
