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Product Detailed Parameters
- Description：TRANS SJT 1200V 20A TO247AB
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Tube
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：1.2 kV
- Current - Drain (Idss) @ Vds (Vgs=0)：1 µA @ 1.2 kV
- Current Drain (Id) - Max：45 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：3825pF @ 800V
- Resistance - RDS(On)：50 mOhms
- Power - Max：282 W
- Operating Temperature：175°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The GA20JT12-247 is a normally-off Silicon Carbide Junction Transistor (SJT) manufactured by GeneSiC Semiconductor. It features a TO-247 package with a drain-source voltage of 1200 V and a continuous drain current of 45 A at 25°C case temperature, decreasing to 20 A at 145°C. The device exhibits a maximum on-resistance of 95 mΩ at 175°C and a thermal resistance from junction to case of 0.53 °C/W. It supports a maximum operating temperature of 175°C and includes short-circuit withstand capability exceeding 20 µs.
Feature Summary
- Gate oxide free SiC switch design
- Positive temperature coefficient of RDS(on)
- Compatible with Si MOSFET/IGBT gate drive ICs
- Excellent gain linearity
Applications
- Down Hole Oil Drilling
- Hybrid Electric Vehicles (HEV)
- Solar Inverters
- Switched-Mode Power Supply (SMPS)
- Motor Drives
Procurement Notes
Verify the specific revision status of the datasheet against the manufacturer's official website prior to procurement. Confirm that the ordering suffix matches the required package variant and electrical characteristics. Ensure compliance with the manufacturer's disclaimer regarding life-saving or safety-critical applications before finalizing purchase orders.
Selection Notes
Select this component for high-frequency switching applications requiring low output capacitance and minimal input signal distortion. Consider the proportional gate drive topologies for optimizing power consumption across wide drain current ranges. Evaluate the short-circuit safe operating area requirements against the circuit's fault protection capabilities.
Part Context
This part belongs to the GeneSiC SJT family, utilizing silicon carbide technology for superior thermal performance compared to traditional silicon devices. The TO-247 package facilitates through-hole mounting suitable for industrial power electronics. It serves as a direct replacement candidate in designs previously utilizing standard silicon MOSFETs or IGBTs where higher efficiency is required.
Replacement Considerations
No official substitutes are listed in the documentation. When replacing legacy silicon devices, verify that the gate drive circuitry can accommodate the current-controlled nature of the SJT rather than voltage-controlled operation typical of MOSFETs.
