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GA301AE3
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Product Detailed Parameters
- Description：SCR 100V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bag
- Voltage - Off State：100 V
- Voltage - Gate Trigger (Vgt) (Max)：750 mV
- Current - Gate Trigger (Igt) (Max)：200 µA
- Current - Hold (Ih) (Max)：5 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：Standard Recovery
- Operating Temperature：0°C ~ 125°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18 (TO-206AA)
- Voltage - On State (Vtm) (Max)：1.5 V
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：100 nA
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Overview
The GA301AE3 is a Silicon Controlled Rectifier (SCR) manufactured by Microchip Technology, designed for robust power switching applications. It features a rated repetitive off-state voltage (VDRM) of 100 V and a non-repetitive on-state peak current capability of 100 A. The device operates within a temperature range of 0°C to +125°C and utilizes a TO-18-3 through-hole package. Key electrical characteristics include a maximum holding current of 5 mA, a gate trigger voltage of 500 mV, and a gate trigger current of 10 uA. The component exhibits a low off-state leakage current of 1 uA under rated voltage conditions and supports a maximum peak reverse gate voltage of 5 V.
Feature Summary
- High surge current handling with 100 A non-repetitive on-state peak current rating
- Low gate sensitivity requiring only 500 mV trigger voltage and 10 uA trigger current
- Robust thermal performance supporting operation up to +125°C junction temperature
- Standardized TO-18-3 axial leaded package for reliable through-hole mounting
Applications
- AC power control circuits requiring high surge tolerance
- Industrial motor control systems utilizing thyristor-based switching
- Solid-state relay designs needing low gate drive requirements
- Overvoltage protection circuits in power distribution networks
Procurement Notes
Verify the specific suffix AE3 indicates RoHS compliance and lead-free termination when sourcing. Confirm the TO-18-3 package dimensions match your PCB footprint requirements. Ensure the 100 V VDRM rating aligns with your circuit's peak inverse voltage demands. Check for any specific storage or handling guidelines related to the axial leaded construction during assembly.
Selection Notes
Select this component when a 100 V blocking capability and high surge current capacity are required in a through-hole format. The low gate trigger current simplifies driver circuit design compared to higher sensitivity SCRs. Consider the TO-18-3 package constraints regarding board space and lead bending radius. Evaluate if the 125°C maximum operating temperature meets your environmental thermal management strategy.
Part Context
The GA301AE3 belongs to Microchip's discrete thyristor portfolio, specifically categorized under Silicon Controlled Rectifiers. It serves as a fundamental power switching element within the broader family of semiconductor devices offered by the manufacturer. This part number represents a standard axial-leaded SCR variant, distinct from surface-mount or integrated thyristor solutions available in other product lines.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, ensure the replacement SCR matches the 100 V VDRM, 100 A I_TSM, and TO-18-3 package specifications. Verify that the gate trigger characteristics remain compatible with your existing drive circuitry to maintain proper switching performance.
