GBJ35M

Overview

The GBJ35M is a single-phase glass-passivated silicon bridge rectifier manufactured by GeneSiC Semiconductor. It features a maximum average forward rectified current (IO) of 35 A and a repetitive peak reverse voltage (VRRM) of 1000 V. The device operates within a junction temperature range of -50 °C to +150 °C. Electrical characteristics include a maximum forward voltage (VF) of 1.05 V at 17.5 A and a maximum reverse leakage current (IR) of 5 µA at 25 °C. The component supports a maximum forward surge current (IFSM) of 500 A for an 8.3 ms pulse width.

Feature Summary

• Single in-line DIP package with compact size and high heat-conducting performance
• Glass passivation provides stable electrical characteristics and low forward voltage
• Epoxy resin material complies with UL 94V-0 flammability standards
• RoHS compliant construction

Applications

• AC to DC power supply conversion
• Battery charging circuits
• General-purpose rectification in industrial equipment

Procurement Notes

Verify the specific manufacturer source, as GeneSiC Semiconductor has been acquired by Navitas Semiconductor. Confirm that the ordering suffix matches the required voltage rating, as the GBJ35 series includes variants with different reverse voltage ratings such as GBJ35J, GBJ35K, and GBJ35M. Ensure compliance with RoHS provisions and UL 94V-0 standards if required by the application specifications.

Selection Notes

Select the GBJ35M when a 1000 V blocking voltage is required for single-phase rectification applications carrying up to 35 A. Consider the thermal resistance values provided in the datasheet for heatsink design; the recommended heatsink size is 19.0 x 19.0 x 7.6 cm for optimal dissipation. Derate the current by 20% if the load is capacitive to ensure reliable operation under all conditions.

Part Context

The GBJ35M belongs to the GBJ series of single-phase bridge rectifiers, which are designed for through-hole mounting on printed circuit boards. This series encompasses multiple voltage ratings, including 600 V, 800 V, and 1000 V options, sharing identical physical dimensions and pin configurations to facilitate design flexibility across different power supply requirements.

Replacement Considerations

GBJ35J (600 V), GBJ35K (800 V)

FAQ

What is the maximum forward surge current capability?

The GBJ35M can withstand a maximum forward surge current of 500 A for an 8.3 ms pulse width at a rated load and initial junction temperature of 25 °C.

How should the device be mounted for optimal heat dissipation?

For excellent heat dissipation, coat conductive silica gel moderately and use an M3 screw to secure the component to a recommended heatsink size of 19.0 x 19.0 x 7.6 cm.

Is the GBJ35M sensitive to electrostatic discharge?

No, the GBJ35M is not ESD sensitive.