SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Diodes Incorporated GBJ810-F is a single-phase standard recovery bridge rectifier rated for an average forward rectified output current of 8.0 A at a case temperature of +110°C. It features a maximum repetitive peak reverse voltage (VRRM) of 1000 V and a maximum forward voltage drop (VF) of 1.0 V when tested at 4.0 A. The device supports a non-repetitive peak forward surge current (IFSM) of 170 A over an 8.3 ms half-sine wave duration. Electrical characteristics include a maximum leakage current of 5 µA at rated voltage and +25°C, rising to 500 µA at +125°C. The component operates within a junction temperature range of -55°C to +150°C and utilizes a GBJ through-hole package.
Verify the specific ordering suffix '-F' against the manufacturer's official documentation to confirm packaging details. The datasheet indicates this part number is supplied in tubes containing 15 units per carrier. Confirm that the lead-free tin finish meets the solderability requirements specified in MIL-STD-202, Method 208 for your assembly process.
Select the GBJ810-F when a 1000 V blocking voltage and 8.0 A continuous current capacity are required. Ensure the application environment allows for adequate thermal management, as the rated current is specified at a case temperature of +110°C. Verify that the 170 A surge capability aligns with the expected inrush currents in the target circuit design.
This component belongs to the GBJ8005–GBJ810 series of 8A standard recovery bridge rectifiers manufactured by Diodes Incorporated. The series offers various voltage ratings from 50 V to 1000 V while maintaining consistent current handling and physical dimensions. The GBJ810 variant specifically targets high-voltage applications within this standardized form factor.
Compatible substitutes include other 8A 1000V bridge rectifiers in the GBJ package such as the GBJ810 from Micro Commercial Components or Sirectifier Semiconductors. Verify pinout compatibility and thermal resistance specifications before substitution.
The typical thermal resistance (RθJC) is 1.6 °C/W per element, measured with the unit mounted on a 100 mm x 100 mm x 1.6 mm aluminum plate heatsink.
Standard versions are not explicitly qualified for automotive use. For applications requiring AEC-Q100/101/104/200 qualification and IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.
The maximum operating junction temperature (TJ) is +150°C.