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The GBPC2508W T0G is a single-phase bridge rectifier from Taiwan Semiconductor, rated for a maximum average forward current of 25A and a repetitive peak reverse voltage of 800V. It utilizes glass passivated chip junctions within a GBPC-W wire structure package. The device supports a junction temperature range from -55°C to +150°C and offers a typical reverse leakage current below 5µA at 25°C. Electrical characteristics include a maximum instantaneous forward voltage drop of 1.1V per diode at 12.5A and a peak forward surge current capability of 300A under an 8.3ms single half-sine-wave condition.
Verify that the ordering code matches the specific suffix requirements for the GBPC-W terminal configuration. Confirm compliance with RoHS directives and UL recognition file E-326243 during sourcing. Ensure storage and handling procedures align with JESD standards to maintain lead solderability and prevent whisker formation throughout the supply chain process.
Select this component when an 800V blocking voltage and 25A continuous current rating are required in a through-hole assembly. The GBPC-W variant is appropriate for applications necessitating wire-style terminals rather than flat or parallel configurations. Evaluate thermal management needs against the 1.5°C/W junction-to-case resistance to determine if additional cooling is necessary for the target operating environment.
This part belongs to the GBPC15, 25, and 35 series of standard bridge rectifiers manufactured by Taiwan Semiconductor. The series covers current ratings from 15A to 35A and voltage ratings from 50V to 1000V. The GBPC2508W specifically denotes the 25A current class and 800V voltage class within the wire-structure packaging option.
Cross-reference with other GBPC2508 variants from different manufacturers ensuring identical 25A/800V ratings and GBPC-W mechanical dimensions. Verify that substitute components meet the same glass passivation and thermal resistance specifications for direct pin-compatible replacement.
The peak forward surge current is 300A when measured as an 8.3ms single half-sine-wave superimposed on the rated load.
Yes, the datasheet specifies that the device utilizes glass passivated chip junctions for improved stability.
The typical junction-to-case thermal resistance is 1.5°C/W.