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The GeneSiC Semiconductor GBPC3501T is a single-phase glass-passivated silicon bridge rectifier designed for high-temperature applications. It features a maximum average forward rectified current of 35.0 A and a repetitive peak reverse voltage of 100 V. The device supports a peak forward surge current of 400 A under single sine-wave conditions. Electrical characteristics are specified at a case temperature of 25 °C, with a maximum instantaneous forward voltage drop of 1.1 V per leg. The component operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific ordering suffix against official documentation to confirm terminal type. The 'T' designation indicates copper leads, while 'W' denotes faston lugs. Confirm package variant matches application requirements before procurement. Cross-reference manufacturer part numbers to ensure compatibility with existing designs.
Select this component for circuits requiring 35 A continuous current and 100 V reverse blocking capability. Ensure adequate heat sinking due to the bolt-down mounting requirement. Verify that the operating environment stays within the -55 °C to 150 °C junction temperature range. Consider derating current by 20% if used with capacitive loads.
This component belongs to the GBPC35 series of single-phase bridge rectifiers. The series includes variants with different voltage ratings, such as GBPC35005 (50 V) and GBPC3502 (200 V). All models share the same 35 A current rating and GBPC-T/W package form factor, allowing for design flexibility across different voltage requirements.
Compatible alternatives include other GBPC35 series parts from different manufacturers with matching 35 A and 100 V specifications. Ensure replacement parts support the same GBPC-T package dimensions and terminal configurations for direct interchangeability.