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The GeneSiC Semiconductor GBPC3502T is a single-phase glass-passivated silicon bridge rectifier designed for high-temperature applications. It features an integrally molded heat sink within the GBPC-T package to ensure efficient thermal dissipation. The device supports a maximum average forward rectified current of 35.0 A and withstands a repetitive peak reverse voltage of 200 V. Key electrical parameters include a maximum instantaneous forward voltage drop of 1.1 V per leg, a peak forward surge current capability of 400 A, and a typical junction capacitance of 300 pF. It operates reliably across a temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm terminal configuration. The 'T' suffix indicates faston lugs or copper leads, distinct from other variants. Confirm RoHS compliance status and lead material specifications directly with the manufacturer or authorized distributor before finalizing procurement orders.
Select this component when a 35 A continuous current rating and 200 V reverse voltage are required. Ensure the mounting surface allows for bolt-down installation with silicone thermal compound to utilize the integrated heat sink effectively. Verify that the application load profile remains within the 400 A surge limit and derate current by 20% if used with capacitive loads.
This part belongs to the GBPC35005T/W through GBPC3504T/W series, which share identical physical dimensions and thermal characteristics but differ in voltage ratings. The GBPC3502T specifically addresses 200 V applications within this family, offering a standardized footprint for designers upgrading or replacing existing 200 V bridge rectifier designs.
Direct substitutes include Vishay VS-GBPC3502W and onsemi GBPC3502W. These alternatives maintain the same 35 A current and 200 V voltage ratings within the GBPC package family. Verify terminal type compatibility, as some equivalents may use different lead configurations.