SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GeneSiC Semiconductor GBPC50005T is a single-phase glass-passivated silicon bridge rectifier designed for high-temperature applications. It features an integrally molded heat sink and offers a maximum average forward rectified current of 50 A at a case temperature of 50 °C. The device supports a repetitive peak reverse voltage of 50 V and withstands a peak forward surge current of 400 A. Electrical characteristics include a maximum instantaneous forward voltage drop of 1.2 V per leg and a typical junction capacitance of 360 pF. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific terminal configuration upon ordering, as the datasheet indicates availability with either nickel-plated faston lugs or copper leads. Confirm that the procurement matches the exact suffix requirements for the intended mounting style. Ensure the supplier documentation aligns with the GBPC-T package specifications provided in the official datasheet.
Select this component when a 50 A continuous current rating and 50 V blocking voltage are required in a compact form factor. The integrated heat sink design simplifies thermal management compared to discrete diode assemblies. Consider the 400 A surge capability for applications involving significant inrush currents or capacitive loads.
This part belongs to the GBPC50005T/W series, which includes variants with different reverse voltage ratings such as 100 V, 200 V, and 400 V. All members of this series share identical current ratings and physical dimensions, allowing for pin-compatible upgrades in designs requiring higher voltage resilience without altering the mechanical layout.
Direct replacements must match the 50 A current rating, 50 V reverse voltage, and GBPC package footprint. Verify that substitute components offer comparable thermal resistance and surge current capabilities to ensure reliable operation under identical load conditions.