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The GeneSiC Semiconductor GBPC5008T is a single-phase glass-passivated silicon bridge rectifier designed for high-current applications. It features a maximum average forward rectified current of 50 A and a repetitive peak reverse voltage of 800 V. The device supports a peak forward surge current of 400 A under resistive or inductive loads. Electrical characteristics are specified at a case temperature of 25 °C, with a typical junction capacitance of 360 pF and thermal resistance of 1.2 °C/W. The component operates within a junction temperature range of -55 °C to 150 °C.
Verify the specific manufacturer source when ordering, as GeneSiC Semiconductor products may be distributed by third-party manufacturers such as diodemodule.com. Confirm that the 'T' suffix corresponds to the copper lead terminal configuration rather than faston lugs. Ensure compliance with RoHS requirements if applicable to your assembly process.
Select this component for circuits requiring 50 A continuous current handling and 800 V blocking voltage. Consider the 1.2 °C/W thermal resistance when designing heatsinking solutions. Derate the forward current by 20% if the load is capacitive. Verify terminal type availability, as options include either nickel-plated faston lugs or copper leads.
This part belongs to the GBPC-T/W package series, which includes variants ranging from 600 V to 1000 V reverse voltage ratings. The GBPC5008T specifically addresses the 800 V requirement within the 50 A current class. It shares mechanical dimensions and thermal characteristics with adjacent models like the GBPC5006T and GBPC5010T.
Cross-reference with other GBPC5008 variants from different manufacturers. Ensure replacement parts match the 50 A current rating, 800 V reverse voltage, and compatible terminal configurations.