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The GBU12D-T is a single-phase silicon bridge rectifier manufactured by Diotec Semiconductor, designed for through-hole mounting in the GBU-4 package. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 12 A. The device exhibits a maximum forward voltage drop of 1 V at rated current and supports a surge current of 270 A. Operating junction temperatures range from -50°C to +150°C, with a typical reverse leakage current of 5 µA.
Verify the specific suffix 'T' against the official Diotec datasheet to confirm tape-and-reel packaging specifications. Ensure the component matches the standard bulk packaging data often listed for the base GBU12D part number. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation prior to procurement.
Select this component when a 200 V rating is required for single-phase bridge rectification with 12 A continuous current capacity. The GBU-4 through-hole package is suitable for applications requiring mechanical robustness and high thermal dissipation. Verify that the 1 V forward voltage drop aligns with the system's efficiency targets and thermal management constraints.
This component belongs to the GBU series of silicon bridge rectifiers from Diotec Semiconductor. The series includes variants with different voltage ratings such as GBU12A (50 V), GBU12B (100 V), and GBU12G (400 V). All share the same 12 A current rating and GBU-4 package form factor, differing primarily in their peak reverse voltage capabilities.
Cross-reference with other manufacturers offering GBU-12A/GBU-12B equivalent packages. Verify pinout compatibility and thermal resistance values. Ensure the replacement part meets the same 200 V reverse voltage and 12 A forward current requirements.