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The GBU803HD2G is a single-phase bridge rectifier manufactured by Taiwan Semiconductor Corporation, belonging to the GBU8 series. It utilizes glass passivation technology and is housed in a KBU-style through-hole package with four pins. The device supports a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 8 A. It withstands a peak non-repetitive forward surge current of 200 A. The component operates within a junction temperature range of -55°C to +150°C, features a typical reverse leakage current below 0.1 μA, and has a maximum forward voltage drop of 1 V.
Verify the specific ordering suffix 'D2G' against official manufacturer documentation to confirm packaging configuration and compliance status. Ensure that the selected variant matches the required thermal and mechanical specifications for the target application environment before finalizing procurement orders.
Select this component when a standard recovery time and 8 A continuous current rating are sufficient for the design requirements. Verify that the 200 V reverse voltage rating exceeds the peak inverse voltage present in the circuit. Confirm that the through-hole KBU package dimensions fit the available PCB footprint constraints.
This part belongs to the GBU8 series of glass passivated single-phase bridge rectifiers from Taiwan Semiconductor. The series covers various voltage ratings from 50 V to 1000 V while maintaining a consistent 8 A current capacity and KBU package form factor across different models.
Compatible substitutes include other 8 A, 200 V bridge rectifiers in the KBU package such as the GBU803G or equivalent parts from other manufacturers meeting identical electrical and mechanical specifications.