GC15009-150A/TR

Overview

The GC15009-150A/TR is a silicon epitaxial mesa frequency linear tuning varactor (FLTVAR) from the GC15000 series, designed for wideband linear tuning in VCO and filter applications. It features a maximum leakage current of 50 nA at 20 volts and operates within a temperature range of -55°C to +125°C. Key electrical parameters include a minimum breakdown voltage of 22V at 10μA reverse current, a capacitance of 5.0 pF at -4V bias, and a typical capacitance of 0.9 pF at -20V bias. The device exhibits a sensitivity of 0.11 and a Q factor of 800 at 4V and 50MHz.

Feature Summary

• Provides wideband linear tuning characteristics suitable for octave tuning without external linearization.
• Features superior passivation for high reliability, low leakage current, and low surface noise.
• Offers exceptional Q values that exceed ion-implanted hyperabrupt diodes.

Applications

• Voltage Controlled Oscillators (VCOs)
• Filters
• Modulators
• Amplifiers

Procurement Notes

Verify the specific suffix '150A' against official Microchip documentation to confirm package style and terminal finish details. Confirm RoHS compliance status and check for any product change notifications or obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when consistent sensitivity and high modulation rate capability are required for modulated VCOs. Ensure circuit design accommodates the non-hermetic surface mount package if applicable, as standard packaging may introduce parasitic capacitance affecting linearity at high bias voltages.

Part Context

This part belongs to the GC15000 series of frequency linear tuning varactors manufactured by Microchip Technology. These devices utilize computer-controlled grown junction epitaxy to achieve functional performance through Ku band frequencies.

Replacement Considerations

Consult factory documentation for direct substitutes. Other models in the GC15000 series offer different capacitance values but share similar FLTVAR characteristics.