GCMX005A120S7B1

Overview

The GCMX005A120S7B1 is a SiC MOSFET half-bridge module from the SemiQ QSiC Gen3 family. It features a 1200V drain-source breakdown voltage and a 5mΩ on-resistance. The device supports a continuous drain current of 348A at case temperature, with a maximum power dissipation of 1042W. It utilizes the S7 package, which provides a 62mm footprint and a reduced height of 17mm. The module incorporates high-speed switching capabilities and reliable body diode characteristics.

Feature Summary

• High-speed switching SiC MOSFETs
• Reliable body diode performance
• Reduced package height design

Applications

• Industrial motor drives
• Power supply systems
• Renewable energy inverters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision alignment for specific electrical parameters. Ensure thermal interface material compatibility with the S7 package dimensions. Validate gate drive requirements against the specified threshold voltage range prior to integration.

Selection Notes

Select this module for applications requiring low conduction losses and compact form factors. The 17mm height suits space-constrained chassis designs. Evaluate thermal management needs based on the 1042W dissipation rating. Consider the 62mm footprint for PCB or baseplate layout constraints.

Part Context

This part belongs to the SemiQ QSiC Gen3 series, expanding the 1200V SiC portfolio. The S7 package variant offers a lower profile compared to standard modules. It complements other models like the GCMX003A120S7B1 within the same footprint family.

Replacement Considerations

Direct substitutes include GCMX003A120S7B1 for higher current capacity in the same package. Cross-reference pinout and thermal specifications when replacing with other 1200V SiC half-bridge modules.