GCMX010A120B2B1P

Overview

The GCMX010A120B2B1P is a 1200V Silicon Carbide (SiC) Half-Bridge Module manufactured by SemiQ. It features N-channel MOSFETs with a maximum drain-source voltage of 1200V and a continuous drain current of 214A at TC=25°C. The module exhibits a typical on-resistance of 9mΩ at TJ=175°C and supports a maximum junction temperature of 175°C. Key electrical parameters include a gate-source voltage range of -10V to +25V, a power dissipation of 750W at TC=25°C, and a thermal resistance from junction to case of 0.20 K/W. The device utilizes press-fit terminal connections for mounting.

Feature Summary

• High-speed switching capabilities optimized for low switching losses
• Reliable body diode performance with rugged characteristics
• Kelvin reference connection ensuring stable operation
• Direct heatsink mounting via isolated package design

Applications

• Photovoltaic Inverter
• Battery charger
• Energy storage system
• High voltage DC to DC converter

Procurement Notes

Verify the specific ordering suffix B2 corresponds to the required press-fit pin configuration and package dimensions. Confirm RoHS compliance status and REACH SVHC declarations directly with the manufacturer or authorized distributors prior to procurement. Ensure the selected component meets the intended application's thermal and electrical requirements as specified in the official datasheet.

Selection Notes

Select this module for applications requiring high voltage isolation and efficient thermal management. Consider the 0.20 K/W junction-to-case thermal resistance for heatsink sizing calculations. Verify that the PCB hole drill diameter accommodates the 0.99-1.09mm press-fit pins. Evaluate the switching energy values against the target operating frequency and load conditions to ensure optimal efficiency.

Part Context

This component belongs to SemiQ's 1200V SiC Half-Bridge Module series. It integrates two N-channel MOSFETs into a single isolated package designed for high-power density applications. The module replaces discrete components to reduce assembly complexity and parasitic inductance, offering a compact solution for modern power electronics designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the 1200V rating, half-bridge configuration, and physical footprint including press-fit pin specifications.

FAQ

What is the maximum junction temperature for the GCMX010A120B2B1P?

The maximum junction temperature (TJ,max) is 175°C.

How are the terminals connected in this module?

The module uses press-fit terminal connections with a recommended PCB end hole diameter of 0.99 to 1.09 mm.

What is the typical on-resistance at elevated temperatures?

The typical on-resistance (RDS,on) is 9 mΩ when measured at TC=25°C, VGS=20V, and TJ=175°C.