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Product Detailed Parameters
- Description：SIC MOSFET MOD
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss)：1700 V
- Current - Continuous Drain (Id) @ 25°C：66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：38mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id：4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：226 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：6333 pF @ 1.2 kV
- FET Feature：-
- Power Dissipation (Max)：341W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The SemiQ GCMX030A170S1-E1 is a silicon carbide (SiC) MOSFET power module belonging to the GCMX series. It features a voltage rating of 1700V and utilizes N-channel technology. The component is designed for base mounting applications, providing a robust solution for high-power semiconductor switching requirements within industrial and energy conversion systems.
Feature Summary
- Utilizes silicon carbide (SiC) technology for enhanced thermal performance
- Configured as an N-channel MOSFET power module
- Engineered for direct base mounting installation
Applications
- High-voltage power conversion systems
- Industrial motor drive inverters
- Renewable energy grid integration equipment
Procurement Notes
Verify the specific datasheet version before implementation, as electrical characteristics may vary between manufacturing batches. Confirm that the 1700V rating aligns with the target circuit's maximum transient voltage levels. Ensure the base mounting interface matches the mechanical design of the heat sink assembly to maintain proper thermal conductivity and electrical isolation during operation.
Selection Notes
Select this component when a 1700V breakdown voltage is required for high-power SiC applications. The GCMX series offers a modular form factor suitable for base mounting, which simplifies thermal management in high-current scenarios. Evaluate the continuous drain current capabilities against the specific load requirements to ensure adequate safety margins under maximum operating temperatures.
Part Context
This module is part of SemiQ's GCMX series, which focuses on silicon carbide power solutions. The series provides various voltage ratings and current configurations to support diverse high-efficiency power electronics designs. The GCMX030A170S1-E1 specifically addresses the need for higher voltage handling in modern power semiconductor architectures.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinout compatibility and thermal resistance values when considering alternative modules from other manufacturers to ensure seamless integration without redesigning the host system.
