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Product Detailed Parameters
- Description：SIC 1200V 80M MOSFET SOT-227
- Series：-
- Mfr：SemiQ
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id：4V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs：58 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：1336 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：142W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：SOT-227
- Package / Case：SOT-227-4, miniBLOC
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Overview
The SemiQ GCMX080B120S1-E1 is a Silicon Carbide (SiC) MOSFET module featuring an N-channel configuration in a single arrangement. It utilizes the SOT-227-4 package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV, a continuous drain current of 28 A, and a maximum on-resistance of 100 mOhms. The device operates within a temperature range of -55 C to +175 C, with a power dissipation rating of 142 W. Gate-source voltage limits are specified from -8 V to +22 V, and the threshold voltage is 4 V.
Feature Summary
- Utilizes Silicon Carbide technology for high-temperature operation up to 175 C
- Designed for screw mount installation in a compact SOT-227-4 package
- Provides high-voltage blocking capability suitable for demanding power electronics
Applications
- PFC Boost Converter
- DC-DC Converter
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing this component. Confirm that the requested part matches the exact model number GCMX080B120S1-E1 to ensure compatibility with the intended circuit design. Check manufacturer documentation for any updates regarding pinout or thermal characteristics before finalizing procurement decisions.
Selection Notes
Select this module for applications requiring robust high-voltage switching with efficient thermal management. The SiC material offers advantages in high-frequency operations compared to traditional silicon devices. Ensure the cooling solution supports the specified power dissipation and operating temperature range for reliable performance.
Part Context
This component belongs to the SemiQ GCMX series of power modules. It is designed as a discrete power switch for converting and controlling electrical energy. The module integrates the SiC MOSFET die into a standardized package to facilitate easy integration into larger power systems.
Replacement Considerations
Direct substitutes may include other 1200V SiC MOSFETs in similar packages. Verify pin compatibility and electrical ratings carefully. No specific alternative part numbers are confirmed in the provided source data.
