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The GCX1209-23-0/TR is a surface-mount variable capacitance diode from the GCX1200–23 series, manufactured by Microchip Technology. It utilizes an abrupt junction silicon design housed in a compact SOT23 package. The component provides a nominal diode capacitance of 8.2 pF and supports a maximum repetitive peak reverse voltage of 30 V. Designed for high performance, it features a minimum quality factor of 2000 and low series resistance, making it suitable for narrow to moderate frequency bandwidth applications across HF through 1500 MHz.
Verify the specific suffix -0/TR against official Microchip documentation to confirm single-diode configuration and tape-and-reel packaging status. Ensure compatibility with RoHS Directive 2002/95/EC requirements if mandated by your project specifications. Cross-reference the part number with current datasheets to validate availability and any superseding device information before finalizing procurement plans.
Select this component when designing circuits requiring high Q varactors in small form factors. The 8.2 pF nominal capacitance and 30 V rating suit specific RF tuning ranges. Compare against other series members for different capacitance values or common cathode configurations if system architecture requires multiple tuned elements in a single package.
This part belongs to the GCX1200–23 series of surface-mount varactors, which supersede earlier GC1200–23 versions. The series offers silicon abrupt junction devices optimized for high performance in limited space. The -23 designation indicates the SOT23 package type, while the -0 suffix typically denotes the single diode variant within the family.
Consult factory resources for availability details on potential substitutes. Verify that alternative varactors match the 8.2 pF capacitance, 30 V rating, and SOT23 footprint to ensure direct interchangeability without circuit redesign.