GE12047CCA3

FET, MOSFET Arrays Overview

The GE12047CCA3 is a half-bridge Silicon Carbide (SiC) power module manufactured by GE Aerospace. It features two N-channel MOSFETs with a drain-source breakdown voltage of 1200V and a continuous drain current of 475A at 25°C case temperature. The device utilizes wire-bondless technology and an AlSiC baseplate with Si3N4 AMB substrate for high thermal performance. Key electrical parameters include a maximum on-state resistance of 4.4 mΩ per switch at 25°C, a total gate charge of 1248 nC, and a junction-to-case thermal resistance of 0.12 °C/W. The module integrates a direct above-die RTD temperature sensor and dedicated DESAT pins.

FET, MOSFET Arrays Feature Summary

• Utilizes GE Power Overlay wire-bondless technology to enhance reliability and reduce parasitic inductance.
• Features an AlSiC baseplate combined with Si3N4 Active Metal Brazing (AMB) substrate for superior thermal management.
• Includes a direct above-die Resistance Temperature Detector (RTD) for precise junction temperature monitoring.
• Incorporates dedicated Drain-Source Assertion Test (DESAT) and Source-Kelvin pins for robust protection and drive optimization.

FET, MOSFET Arrays Applications

• High-power electric vehicle inverters
• Industrial motor drives
• Uninterruptible power supplies (UPS)
• High-frequency renewable energy converters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'CCA3' against the manufacturer's datasheet to confirm pinout configuration and terminal plating specifications. Ensure that the ordering documentation explicitly references the AEC-Q101 qualification status if automotive compliance is required. Confirm that the package dimensions match the provided electrical interface outline drawing prior to PCB layout finalization.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high power density and low switching losses at elevated frequencies. Evaluate the thermal resistance characteristics against the system's cooling strategy, particularly considering the AlSiC baseplate compatibility. Verify that the gate drive circuitry supports the recommended voltage range of -8V to +20V and accounts for the specified gate charge requirements.

FET, MOSFET Arrays Part Context

This module belongs to the GE Aerospace SiC Power series, designed for high-performance power conversion. It represents a transition from traditional silicon IGBTs to wide-bandgap semiconductors, offering higher blocking voltages and operating temperatures. The half-bridge topology is standard for three-phase inverter legs and DC-DC converter stages.

FET, MOSFET Arrays Replacement Considerations

Cross-reference with other 1200V SiC half-bridge modules from manufacturers such as Infineon or Wolfspeed. Ensure equivalent current ratings, thermal resistance values, and pin configurations are matched. Verify that the replacement device meets the same AEC-Q101 reliability standards if applicable.

FET, MOSFET Arrays FAQ

What is the purpose of the Kelvin Source pins?

The Kelvin Source pins provide a low-inductance connection point for the gate driver return path, minimizing noise and ensuring accurate switching control by separating the high-current source path from the sensitive gate drive circuit.

How does the integrated RTD function?

The Resistance Temperature Detector is mounted directly over the center-most die, allowing for direct measurement of the junction temperature. It provides a rated resistance of 1k ohm with high accuracy for thermal management feedback.

What is the recommended gate voltage range?

The recommended operating gate-source voltage range is -8V to +20V. The maximum absolute rating allows up to +23V, but operation within the recommended range ensures optimal performance and longevity.