GE17042BCA3

FET, MOSFET Arrays Overview

The GE17042BCA3 is a 1700V dual silicon carbide power module designed for high-power, high-frequency applications requiring superior power density. It features highly reliable GE SiC MOSFET devices with a low on-state resistance of 3.75 mΩ and ultra-low switching losses across the entire operating range. The module incorporates an AlSiC baseplate and Si3N4 AMB substrate to minimize stray inductance to 1 nH. It includes integrated temperature sensing via an RTD mounted directly over the center-most die. Rated for a continuous drain current of 425 A at 25°C case temperature, it supports a maximum junction temperature of 175°C.

FET, MOSFET Arrays Feature Summary

• Highly reliable GE SiC MOSFET devices
• Low RDS(ON) (3.75 mΩ device only)
• Low stray inductance (1 nH)
• Ultra-low switching losses over entire operating range
• Body diode with minimal reverse recovery
• Integrated temperature sensing
• AlSiC Baseplate and Si3N4 AMB Substrate

FET, MOSFET Arrays Applications

• High power applications
• High frequency applications
• Applications needing best-in-class power density

FET, MOSFET Arrays Procurement Notes

Verify the specific part number GE17042BCA3 against official GE Aviation documentation to confirm exact specifications and revisions. Ensure compatibility with required gate drive voltages and thermal management solutions. Confirm that the application does not involve life support systems or human body implantation without express written approval from General Electric Company. Check for any recent document revisions or updates to the datasheet before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this module for designs prioritizing high power density and efficiency in high-voltage environments. Consider its 175°C junction temperature rating and robust thermal characteristics enabled by the AlSiC baseplate and Si3N4 AMB substrate. Evaluate the need for integrated temperature sensing for precise thermal monitoring. Assess system requirements against the 1700V breakdown voltage and 425A continuous current capabilities to ensure adequate performance margins.

FET, MOSFET Arrays Part Context

This component belongs to GE Aviation's portfolio of silicon carbide power modules, engineered for demanding power conversion tasks. It represents a specialized solution leveraging advanced semiconductor materials to achieve superior electrical and thermal performance compared to traditional silicon-based alternatives. The module integrates multiple switches into a single package to reduce parasitic inductance and improve overall system reliability.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum junction temperature for the GE17042BCA3?

The maximum junction temperature (TJmax) is 175°C.

How is temperature sensing implemented in this module?

It features an integrated RTD (Resistance Temperature Detector) mounted directly over the center-most die, allowing for direct reading of the junction temperature.

What material is used for the baseplate?

The baseplate material is AlSiC (Aluminum Silicon Carbide).