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GE17042CCA3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists GE Aerospace. Its product description is MOSFET 2N-CH 1700V 425A MODULE. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for GE17042CCA3
- Description：MOSFET 2N-CH 1700V 425A MODULE
- Series：SiC Power
- Mfr：GE Aerospace
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C：425A (Tc)
- Rds On (Max) @ Id, Vgs：4.45mOhm @ 425A, 20V
- Vgs(th) (Max) @ Id：4.5V @ 160mA
- Gate Charge (Qg) (Max) @ Vgs：1207nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds：29100pF @ 900V
- Power - Max：1250W
- Operating Temperature：175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for GE17042CCA3
FET, MOSFET Arrays Overview
The GE17042CCA3 is a 1700V half-bridge silicon carbide power module designed for high-power, high-frequency applications requiring superior power density. It features highly reliable GE SiC MOSFET devices with a low on-state resistance of 3.75 mΩ and ultra-low switching losses across the entire operating range. The module integrates an AlSiC baseplate and Si3N4 AMB substrate to minimize stray inductance to 6 nH. Key electrical specifications include a continuous drain current of 425 A at 25°C case temperature and a maximum junction temperature of 175°C.
FET, MOSFET Arrays Feature Summary
- Integrated temperature sensing via dedicated RTD pins
- Dedicated DESAT pin and source-Kelvin pin for precise control
- AlSiC baseplate and Si3N4 AMB substrate for thermal management
- Body diode with minimal reverse recovery characteristics
FET, MOSFET Arrays Applications
- High power industrial motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
- Electric vehicle charging systems
FET, MOSFET Arrays Procurement Notes
Verify component authenticity by cross-referencing the part number against official GE Aviation documentation. Confirm that the datasheet revision matches the latest public release. Ensure all handling procedures comply with electrostatic discharge (ESD) protocols specified in the manufacturer's guidelines prior to installation.
FET, MOSFET Arrays Selection Notes
Select this module when system requirements demand high voltage blocking capability combined with low conduction losses. Evaluate the thermal resistance parameters against the specific heatsink design to ensure the junction temperature remains within the 175°C limit under expected load conditions.
FET, MOSFET Arrays Part Context
This component belongs to the family of discrete semiconductor modules manufactured by GE Aviation. It utilizes silicon carbide technology to achieve higher efficiency compared to traditional silicon-based alternatives. The half-bridge configuration allows for versatile integration into various power conversion topologies.
FET, MOSFET Arrays Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FET, MOSFET Arrays FAQ
What is the recommended gate-source voltage range?
The recommended gate-source voltage range is -5 V to +20 V.
How does the module handle overcurrent protection?
The module includes a dedicated DESAT pin to facilitate desaturation detection and overcurrent protection circuitry.
What is the maximum pulsed drain current?
The maximum pulsed drain current is 850 A at a case temperature of 25°C with a pulse width of 1 ms.
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