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Product Detailed Parameters
- Description：DIODE MOD SIC 600V 10A SOT-227
- Series：-
- Mfr：SemiQ
- Package：Tube
- Diode Configuration：2 Independent
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：600 V
- Current - Average Rectified (Io) (per Diode)：10A
- Voltage - Forward (Vf) (Max) @ If：1.7 V @ 10 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：100 µA @ 600 V
- Operating Temperature - Junction：-55°C ~ 175°C
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Grade：-
- Qualification：-
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Overview
The SemiQ GHXS010A060S-D3 is a Silicon Carbide Schottky Barrier Diode module rated for 600V reverse voltage and 10A forward current. It utilizes SiC technology to achieve low forward voltage drop of 1.77V at specified conditions. The component operates within a temperature range of -55°C to +175°C. It features a SOT-227 package with chassis mount configuration, designed for high-efficiency power conversion applications requiring fast switching and thermal robustness.
Feature Summary
- Utilizes Silicon Carbide (SiC) technology for enhanced thermal performance and efficiency
- Features a SOT-227 chassis mount package for secure installation
- Designed for high-temperature operation up to 175°C
Applications
- Electric vehicle charging systems
- Induction heating equipment
- General power supply units
Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing this component. Confirm that the SOT-227 package type matches your mechanical design requirements. Ensure that the 600V rating and 10A current capacity align with your circuit's electrical specifications before finalizing procurement decisions.
Selection Notes
Select this module for applications requiring high-frequency switching and reduced conduction losses compared to silicon alternatives. Consider the thermal management capabilities required for operation at elevated temperatures up to 175°C. Evaluate the chassis mounting style against available board space and cooling infrastructure in your design.
Part Context
This component belongs to the SemiQ GHXS series of SiC Schottky diode modules. The series includes various ratings such as 600V/10A and 650V/100A variants. These modules are engineered to replace traditional silicon diodes in high-performance power electronics, offering improved reliability and efficiency in demanding industrial and automotive environments.
Replacement Considerations
Direct substitutes may include other 600V SiC Schottky diodes in similar packages from different manufacturers. Verify pinout compatibility and thermal resistance values when considering alternative sources. Cross-reference electrical parameters to ensure equivalent performance in the target application.
