GHXS030A120S-D1E

Overview

The GHXS030A120S-D1E is a 1200V Silicon Carbide (SiC) Schottky diode rectifier bridge module manufactured by SemiQ. It features an internally isolated SOT-227 package with an Al2O3 substrate, providing electrical isolation and low thermal resistance. The device supports continuous forward currents up to 30 A at 25°C case temperature and handles non-repetitive peak forward currents of 1550 A. Key electrical parameters include a maximum repetitive peak reverse voltage (VRRM) of 1200 V, a typical forward voltage (VF) of 1.79 V at 30 A and 25°C, and a junction-to-case thermal resistance (RthJC) of 0.61 °C/W. Operating temperatures range from -55°C to +175°C.

Feature Summary

• Zero reverse recovery and zero forward recovery characteristics ensure minimal switching losses and negligible ringing patterns.
• Internally isolated package utilizing an Al2O3 substrate for enhanced electrical safety and ruggedness.
• Positive temperature coefficient on forward voltage facilitates easy paralleling and simplified thermal management.
• Temperature-independent switching behavior and high dv/dt ruggedness support reliable operation in high-frequency environments.

Applications

• Switched-mode power supplies
• Induction heating systems
• Welding equipment
• Electric vehicle charging stations

Procurement Notes

Verify the specific ordering suffix D1E against official documentation to confirm internal configuration details, as suffixes may denote specific manufacturing revisions or testing criteria not explicitly detailed in general summaries. Confirm RoHS compliance status through current manufacturer declarations prior to final procurement decisions.

Selection Notes

Select this component for applications requiring high-voltage rectification with minimal switching losses. Ensure the design accommodates the 1200V rating and utilizes the SOT-227 mounting style. Consider the positive temperature coefficient for parallel operation strategies and verify thermal management capabilities against the specified RthJC values under expected operating conditions.

Part Context

This part belongs to the GHXS series of SiC power modules from SemiQ, designed for high-performance power conversion. It shares the SOT-227 form factor with other variants in the family but is distinctively configured as a rectifier bridge rather than a single diode, offering integrated functionality for full-wave rectification applications.

Replacement Considerations

Direct replacements must match the 1200V rating, 30A current capacity, and SOT-227 package dimensions. Verify that alternative rectifier bridges maintain comparable forward voltage characteristics and thermal resistance to ensure equivalent performance in existing designs.

FAQ

What is the maximum repetitive peak reverse voltage for the GHXS030A120S-D1E?

The maximum repetitive peak reverse voltage (VRRM) is 1200 V.

Does this module exhibit reverse recovery charge?

No, the GHXS030A120S-D1E features zero reverse recovery due to its Schottky construction.

What is the recommended terminal connection torque?

The recommended terminal connection torque is between 1.1 N-m and 1.3 N-m.