GHXS030A120S-D3

Overview

The GHXS030A120S-D3 is a silicon carbide Schottky diode power module manufactured by SemiQ. It features a dual diode configuration within an internally isolated SOT-227 package utilizing aluminum nitride (AlN). The device provides a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 30 A per leg at a case temperature of 25 °C. The typical forward voltage is 2.05 V at 30 A and 25 °C, with a maximum junction-to-case thermal resistance of 0.47 °C/W. It supports an operating junction temperature range from -55 °C to +175 °C.

Feature Summary

• Zero reverse recovery and zero forward recovery characteristics ensure minimal switching losses.
• Temperature-independent switching behavior eliminates thermal runaway risks during operation.
• Internally isolated package construction using AlN enhances electrical safety and ruggedness.
• Positive temperature coefficient on forward voltage facilitates easy paralleling for higher current applications.

Applications

• Switched-mode power supplies
• Induction heaters
• Welding equipment
• Charging stations

Procurement Notes

Verify the specific revision status of the datasheet prior to final design implementation, as parameters may be updated. Confirm that the mounting torque requirements align with the mechanical constraints of the heatsink interface. Ensure compliance with RoHS directives and REACH SVHC declarations for the target market. Validate that the thermal management system can maintain the junction temperature within the specified limits under worst-case operating conditions.

Selection Notes

Select this component when high-frequency operation and low electromagnetic interference are critical design requirements. The positive temperature coefficient of the forward voltage allows for reliable parallel operation without active current balancing circuits. Consider the low stray inductance of the SOT-227 package for applications sensitive to voltage overshoot. Verify that the non-repetitive surge current capability meets the transient stress requirements of the specific circuit topology.

Part Context

This module belongs to SemiQ's 1200V SiC power module series designed for high-performance power conversion systems. The SOT-227 packaging format is optimized for screw-mount installation onto heatsinks, providing a robust mechanical connection. The internal isolation provided by the AlN substrate distinguishes it from standard ceramic packages, offering enhanced dielectric strength and thermal conductivity for demanding industrial environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the source documentation.

FAQ

What is the maximum dv/dt ruggedness rating for this module?

The module has a diode dv/dt ruggedness rating of 200 V/ns.

Does the switching behavior change with temperature?

No, the switching behavior is temperature independent, ensuring consistent performance across the operating junction temperature range.

What material is used for internal isolation in the package?

The package uses Aluminum Nitride (AlN) for internal isolation, which provides low junction-to-case thermal resistance and high dielectric strength.