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The GHXS060B120S-D3 is a Silicon Carbide (SiC) Schottky Barrier Diode module manufactured by SemiQ. It features a dual configuration housed in a SOT-227-4 package with screw mount installation. The device supports a reverse voltage of 1200V and a continuous forward current of 60A. Key electrical parameters include a maximum forward voltage of 2.12V and a power dissipation rating of 375W. The component operates within a temperature range of -55°C to +175°C.
Verify the specific suffix D3 against official documentation to confirm pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the procurement channel provides valid traceability for this obsolete or limited-stock component type.
Select this module when a 1200V SiC diode with 60A capacity is required in a SOT-227 form factor. Compare the 375W power dissipation against system thermal constraints. Verify that the dual configuration meets circuit topology requirements compared to single units.
This component belongs to the GHXS series of SiC Schottky diode modules from SemiQ. It is designed for robust power electronics applications requiring high efficiency and thermal stability. The SOT-227 package is standard for chassis-mounted power modules in industrial settings.
Publicly confirmed substitute part numbers are not available in the provided source data. Consult the manufacturer for direct replacements or updated series equivalents.