GP2D005A120A

Overview

The GP2D005A120A is a 1200 V Silicon Carbide Schottky diode in a TO-220-2L package. It supports a continuous forward current of up to 17 A at 25 °C and handles surge currents up to 40 A. The device features zero reverse recovery charge, ensuring fast switching with negligible losses. Key electrical parameters include a maximum reverse leakage current of 317 µA at 1200 V and 175 °C, a typical forward voltage of 1.8 V at 5 A, and a junction-to-case thermal resistance of 1.50 °C/W.

Feature Summary

• Zero reverse recovery charge for lossless switching
• High dv/dt ruggedness rated at 50 V/ns
• Temperature-independent switching characteristics
• Parallel device capability with inherent thermal stability

Applications

• Motor drives
• Switch mode power supplies
• Power factor correction

Procurement Notes

Verify the specific manufacturer documentation for RoHS and REACH compliance status before integration. Confirm that the TO-220-2L mounting torque requirements are met during assembly. Ensure operating temperatures remain within the specified -55 °C to 175 °C range to maintain performance reliability.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses. The unipolar nature eliminates reverse recovery issues common in silicon diodes. Evaluate thermal management needs based on the 1.50 °C/W junction-to-case resistance and derating curves for continuous operation.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group Inc. (GPT). The series focuses on high-efficiency rectification solutions utilizing SiC technology for superior thermal and electrical performance compared to traditional silicon alternatives.

Replacement Considerations

No verified public substitute part numbers are available in the provided documentation.