GP2D005A120C

Overview

The GP2D005A120C is a Silicon Carbide Schottky diode from the Amp+ series, manufactured by SemiQ. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 5 A at 25 °C case temperature. The device utilizes a TO-252-2L (DPAK) surface-mount package with a flange mount for thermal management. Key electrical characteristics include a typical forward voltage of 1.60 V at 5 A and 25 °C, and a total capacitive charge of 22 nC at 1200 V reverse bias.

Feature Summary

• Zero reverse recovery current enabling fast, temperature-independent switching
• Unipolar rectifier design resulting in zero switching loss
• High surge current capability for robust operation under transient conditions

Applications

• Motor drives
• Switch mode power supplies
• Power factor correction

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements. Ensure storage and handling procedures adhere to standard semiconductor preservation guidelines to maintain junction integrity prior to assembly.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses. Evaluate thermal resistance parameters relative to system heat dissipation capabilities. Consider the unipolar nature and lack of reverse recovery charge when designing circuits sensitive to electromagnetic interference or requiring high bandwidth performance.

Part Context

This device belongs to the Amp+ series of Silicon Carbide Schottky diodes produced by SemiQ. The series emphasizes efficiency improvements and reduced thermal management requirements compared to traditional silicon alternatives. The specific model integrates advanced material properties to support high-voltage operations within compact surface-mount form factors.

Replacement Considerations

No public confirmed substitute part numbers are available.