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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 8A TO220-2
- Series：-
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：8A
- Voltage - Forward (Vf) (Max) @ If：1.45 V @ 30 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：9 µA @ 650 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
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Overview
The GP2D008A065A is a Silicon Carbide (SiC) Schottky diode manufactured by SemiQ. It features an 8 A forward current rating and a 650 V repetitive reverse voltage capability. The device utilizes a TO-220-2 through-hole package configuration. Key electrical parameters include a maximum forward voltage of 1.53 V and a low reverse leakage current of 3 µA. It supports a forward surge current of 40 A and operates within a junction temperature range from -55 °C to +175 °C.
Feature Summary
- Utilizes silicon carbide technology for high-temperature stability
- Features a single-diode configuration in a standard through-hole package
- Provides low forward voltage drop characteristics
Applications
- High-frequency power conversion circuits
- DC-DC converter output rectification
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify the specific suffix designation against official SemiQ documentation to confirm exact electrical tolerances and marking codes. Ensure the procurement channel provides valid RoHS compliance certificates. Confirm that the TO-220-2 package dimensions match the target PCB footprint requirements before finalizing orders.
Selection Notes
Select this component when designing circuits requiring robust performance at elevated temperatures up to 175 °C. The 650 V rating suits medium-voltage applications, while the 8 A current capacity defines its load handling limits. Consider the thermal resistance of the TO-220-2 package for adequate heat dissipation strategies in the final assembly design.
Part Context
This part belongs to the SemiQ SiC Schottky diode portfolio, which includes various current ratings and voltage classes. It shares the same semiconductor material technology as higher-current variants like the GP3D series but offers lower current handling suitable for compact power stages. The product line emphasizes reliability in harsh electrical environments.
Replacement Considerations
Cross-reference with other 650V 8A SiC Schottky diodes in TO-220-2 packages. Verify pinout compatibility and thermal characteristics before substituting with components from other manufacturers.
