GP2D010A120U

Description：DIODE ARR SIC 1200V 17A TO247-3
Series：Amp+™

SKU:f03e4aa3675b Category: Diode Arrays Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 1200V 17A TO247-3
Series：Amp+™
Mfr：SemiQ
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：17A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 5 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：10 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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GP2D010A120U

Overview

The GP2D010A120U is a Silicon Carbide Schottky diode array manufactured by SemiQ. It features a common cathode configuration with two diodes housed in a TO-247-3 through-hole package. The device supports a maximum DC reverse voltage of 1200 V and an average forward current of 17 A per diode. It exhibits a forward voltage of 1.8 V at 10 A and a reverse leakage current of 20 µA at 1200 V. The junction operating temperature range spans from -55°C to 175°C.

Feature Summary

Utilizes Silicon Carbide (SiC) technology for high-temperature operation
Features zero reverse recovery time for fast switching performance
Provides a dual common cathode configuration in a single package

Applications

High-frequency power conversion circuits
DC-DC converter output rectification
Uninterruptible power supply (UPS) systems

Procurement Notes

Verify the specific suffix 'U' against official SemiQ documentation to confirm the exact pinout and mechanical dimensions, as variations may exist within the product family. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCN) regarding lifecycle or material updates before finalizing procurement plans.

Selection Notes

Select this component when applications require low forward voltage drop and high thermal stability compared to silicon alternatives. Ensure the circuit design accommodates the 1200 V blocking capability and that the PCB layout supports the TO-247-3 package's thermal dissipation requirements for continuous 17 A operation.

Part Context

This part belongs to SemiQ's Amp+™ series of SiC Schottky diodes. These components are designed for standardized industrial packages including TO-247, offering enhanced efficiency over traditional silicon rectifiers. The series targets high-power density applications requiring robust reliability under extreme thermal conditions.