GP2D010A170B

GP2D010A170B

  • Description:DIODE SIL CARB 1700V 10A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube

SKU:363e2cd1b402 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE SIL CARB 1700V 10A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1700 V
  • Current - Average Rectified (Io):10A
  • Voltage - Forward (Vf) (Max) @ If:1.75 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 1700 V
  • Capacitance @ Vr, F:812pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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GP2D010A170B

Overview

The SemiQ GP2D010A170B is a Silicon Carbide (SiC) Schottky diode with a 1700 V reverse voltage rating and 10 A forward current. It utilizes the TO-247-2 through-hole package. The device features zero reverse recovery charge, enabling high-speed switching with minimal losses. It operates within a junction temperature range of -55°C to +175°C. The component is part of the Amp+ series and offers low thermal resistance for efficient heat dissipation in power conversion circuits.

Feature Summary

  • Silicon Carbide Schottky construction for superior thermal performance
  • Zero reverse recovery time eliminating switching losses
  • High-temperature operation capability up to 175°C junction temperature

Applications

  • High-frequency DC-DC converters
  • Uninterruptible Power Supplies (UPS)
  • Industrial motor drives

Procurement Notes

Verify the specific suffix 'B' against the manufacturer's latest datasheet to confirm pinout and packaging details. Confirm RoHS compliance status as required by your assembly specifications. Check for obsolescence notices, as availability may vary across distributors. Ensure the TO-247-2 footprint matches your PCB design constraints before ordering.

Selection Notes

Select this component when high-voltage blocking capability and fast switching are critical. The SiC technology provides lower forward voltage drop compared to silicon counterparts at high temperatures. Consider the TO-247-2 package for its robust mechanical mounting and thermal management capabilities in medium-power applications.

Part Context

This diode belongs to SemiQ's Amp+ series of wide-bandgap semiconductors. It is designed to replace traditional silicon rectifiers in demanding environments. The product line emphasizes reliability and efficiency in power electronics. It complements other SemiQ components like MOSFETs for complete solution designs.

Replacement Considerations

Direct substitutes include the GP3D010A170B from the same manufacturer. Verify that alternative parts maintain the 1700V rating and TO-247-2 package compatibility. Ensure thermal characteristics match the original design requirements.

GP2D010A170BGP2D010A170B

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