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The GP2D020A065B is a Silicon Carbide Schottky diode from the Amp+ series, rated for a maximum DC blocking voltage of 650 V. It supports a continuous forward current of up to 20 A at a case temperature of 150 °C and handles surge currents up to 160 A. The device features zero reverse recovery time and negligible switching loss, with a typical total capacitive charge of 45 nC. Operating within a junction temperature range of -55 °C to 175 °C, it utilizes a TO-247-2L package.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and REACh SVHC declarations prior to integration. Ensure thermal management aligns with specified derating curves. Validate that the TO-247-2L mounting torque meets mechanical requirements. Check for any specific handling precautions related to high-voltage semiconductor components.
Select this component for high-frequency applications requiring minimal switching losses. Consider the low forward voltage drop characteristics for improved system efficiency. Evaluate thermal resistance values against heat sink capabilities. Verify compatibility with parallel operation requirements due to thermal stability features. Assess voltage ratings against circuit peak reverse voltages.
This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group Inc. The series emphasizes high reliability and performance in power conversion systems. The TO-247-2L package facilitates efficient heat dissipation and robust mechanical mounting for industrial-grade electronics.
No publicly confirmed substitute part numbers are available in the provided documentation.
The device exhibits zero reverse recovery current, resulting in a negligible switching time of less than 10 ns.
The forward voltage decreases as the junction temperature increases, ranging from a maximum of 1.65 V at 25 °C to 1.45 V at 175 °C under a 20 A forward current.