GP2D020A065B

GP2D020A065B

  • Description:DIODE SIL CARB 650V 20A TO247-2
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube

SKU:839331375655 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE SIL CARB 650V 20A TO247-2
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):20A
  • Voltage - Forward (Vf) (Max) @ If:1.65 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 µA @ 650 V
  • Capacitance @ Vr, F:1054pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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GP2D020A065B

Overview

The GP2D020A065B is a Silicon Carbide Schottky diode from the Amp+ series, rated for a maximum DC blocking voltage of 650 V. It supports a continuous forward current of up to 20 A at a case temperature of 150 °C and handles surge currents up to 160 A. The device features zero reverse recovery time and negligible switching loss, with a typical total capacitive charge of 45 nC. Operating within a junction temperature range of -55 °C to 175 °C, it utilizes a TO-247-2L package.

Feature Summary

  • Zero reverse recovery current enabling fast, temperature-independent switching
  • Unipolar rectifier design providing zero switching loss and higher efficiency
  • High surge current capability suitable for demanding power applications

Applications

  • Motor drives
  • Switch mode power supplies
  • Power factor correction

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and REACh SVHC declarations prior to integration. Ensure thermal management aligns with specified derating curves. Validate that the TO-247-2L mounting torque meets mechanical requirements. Check for any specific handling precautions related to high-voltage semiconductor components.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses. Consider the low forward voltage drop characteristics for improved system efficiency. Evaluate thermal resistance values against heat sink capabilities. Verify compatibility with parallel operation requirements due to thermal stability features. Assess voltage ratings against circuit peak reverse voltages.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group Inc. The series emphasizes high reliability and performance in power conversion systems. The TO-247-2L package facilitates efficient heat dissipation and robust mechanical mounting for industrial-grade electronics.

Replacement Considerations

No publicly confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the reverse recovery time of the GP2D020A065B?

The device exhibits zero reverse recovery current, resulting in a negligible switching time of less than 10 ns.

How does the forward voltage vary with temperature?

The forward voltage decreases as the junction temperature increases, ranging from a maximum of 1.65 V at 25 °C to 1.45 V at 175 °C under a 20 A forward current.

GP2D020A065BGP2D020A065B

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