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The SemiQ GP2D020A120B is a Silicon Carbide Schottky diode in a TO-247-2L package. It features a 1200 V repetitive peak reverse voltage and a continuous forward current of 20 A at 25 °C, rising to 65 A under specific thermal conditions. The device exhibits a maximum forward voltage of 1.80 V at 20 A and 25 °C. Key electrical characteristics include a total capacitive charge of 86 nC and a switching time of less than 10 ns. Thermal resistance from junction to case is 0.42 °C/W, with an operating temperature range spanning -55 °C to 175 °C.
Verify the manufacturer designation carefully, as the datasheet originates from Global Power Technologies Group Inc., while the brand is listed as SemiQ. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements before integration. Ensure the TO-247-2L package mounting torque matches your assembly specifications. Check REACh SVHC declarations for regulatory adherence.
Select this component for high-frequency applications requiring zero reverse recovery charge. Evaluate thermal management capabilities based on the 0.42 °C/W junction-to-case resistance. Consider the 1200 V rating for robust blocking performance. Verify that the 20 A continuous current aligns with system load requirements across the specified temperature range.
This device belongs to the Amp+ series of Silicon Carbide Schottky diodes. It utilizes a unipolar structure to eliminate reverse recovery losses. The technology supports high bandwidth operation and reduced heat sink sizes compared to traditional silicon alternatives. The component is designed for industrial power conversion environments.
GP3D020A170B is documented as a direct substitute within the manufacturer's portfolio.
The device features zero reverse recovery current, resulting in a switching time of less than 10 ns.
The forward voltage decreases as temperature increases, dropping from a maximum of 1.80 V at 25 °C to lower values at elevated junction temperatures.