GP2D020A120B

GP2D020A120B

  • Description:DIODE SIL CARB 1200V 20A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube

SKU:a1a8bf63862e Category: Brand:

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Product Detailed Parameters

  • Description:DIODE SIL CARB 1200V 20A TO2472
  • Series:Amp+™
  • Mfr:SemiQ
  • Package:Tube
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io):20A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 20 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:40 µA @ 1200 V
  • Capacitance @ Vr, F:1270pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-247-2
  • Supplier Device Package:TO-247-2
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Grade:-
  • Qualification:-

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GP2D020A120B

Overview

The SemiQ GP2D020A120B is a Silicon Carbide Schottky diode in a TO-247-2L package. It features a 1200 V repetitive peak reverse voltage and a continuous forward current of 20 A at 25 °C, rising to 65 A under specific thermal conditions. The device exhibits a maximum forward voltage of 1.80 V at 20 A and 25 °C. Key electrical characteristics include a total capacitive charge of 86 nC and a switching time of less than 10 ns. Thermal resistance from junction to case is 0.42 °C/W, with an operating temperature range spanning -55 °C to 175 °C.

Feature Summary

  • Zero reverse recovery current for fast, temperature-independent switching
  • High surge current capability with unipolar rectification
  • Parallel device compatibility ensured by positive thermal stability

Applications

  • Motor drives
  • Switch mode power supplies
  • Power factor correction

Procurement Notes

Verify the manufacturer designation carefully, as the datasheet originates from Global Power Technologies Group Inc., while the brand is listed as SemiQ. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements before integration. Ensure the TO-247-2L package mounting torque matches your assembly specifications. Check REACh SVHC declarations for regulatory adherence.

Selection Notes

Select this component for high-frequency applications requiring zero reverse recovery charge. Evaluate thermal management capabilities based on the 0.42 °C/W junction-to-case resistance. Consider the 1200 V rating for robust blocking performance. Verify that the 20 A continuous current aligns with system load requirements across the specified temperature range.

Part Context

This device belongs to the Amp+ series of Silicon Carbide Schottky diodes. It utilizes a unipolar structure to eliminate reverse recovery losses. The technology supports high bandwidth operation and reduced heat sink sizes compared to traditional silicon alternatives. The component is designed for industrial power conversion environments.

Replacement Considerations

GP3D020A170B is documented as a direct substitute within the manufacturer's portfolio.

FAQ

What is the reverse recovery time for this diode?

The device features zero reverse recovery current, resulting in a switching time of less than 10 ns.

How does the forward voltage vary with temperature?

The forward voltage decreases as temperature increases, dropping from a maximum of 1.80 V at 25 °C to lower values at elevated junction temperatures.

GP2D020A120BGP2D020A120B

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