GP2D020A120U

Description：DIODE ARR SIC 1200V 33A TO247-3
Series：Amp+™

SKU:38adb03b3259 Category: Diode Arrays Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 1200V 33A TO247-3
Series：Amp+™
Mfr：SemiQ
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：33A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：20 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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GP2D020A120U

Overview

The SemiQ GP2D020A120U is a 1200V Silicon Carbide Schottky diode in a TO-247-3L package. It features a continuous forward current of 33A at TC=25°C and 175°C junction temperature, with a peak repetitive reverse voltage of 1200V. The device exhibits a maximum forward voltage of 1.8V at 10A (25°C) and 2.7V at 10A (175°C). Thermal resistance from junction to case is 0.80°C/W, supporting a power dissipation of 188W at 25°C case temperature. Operating and storage temperatures range from -55°C to 175°C.

Feature Summary

Zero reverse recovery current for zero switching loss
Fast, temperature-independent switching characteristics
High surge current capability with thermal stability

Applications

Motor drives
Switch mode power supplies
Power factor correction

Procurement Notes

Verify the specific manufacturer source, as documentation references Global Power Technologies Group Inc., while distributor listings may indicate SemiQ. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements. Ensure the TO-247-3L package marking matches '2D020A120'. Validate that the component meets the specified thermal and electrical parameters for your intended operating conditions.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses due to its unipolar nature. Consider the 0.80°C/W thermal resistance for heat sink sizing calculations. Evaluate the 1200V rating against system voltage spikes. The TO-247-3L package facilitates through-hole mounting with M3 screw attachment. Verify compatibility with wave soldering processes up to 260°C.

Part Context

This silicon carbide Schottky diode belongs to the Amp+ series, designed for high-efficiency power conversion. It utilizes SiC technology to achieve superior performance compared to traditional silicon rectifiers. The device is engineered for robust operation in demanding thermal environments, offering parallel device stability and reduced heat sink requirements.