GP2D020A170B

Overview

The SemiQ GP2D020A170B is a Silicon Carbide (SiC) Schottky diode in the Amp+ series, housed in a TO-247-2 through-hole package. It features a maximum DC reverse voltage of 1700 V and an average forward current rating of 20 A. The device exhibits zero reverse recovery time and a typical forward voltage of 1.75 V at 20 A. Reverse leakage current is specified as 40 µA at 1700 V, with a junction capacitance of 1624 pF at 1 V and 1 MHz. Operating temperature ranges from -55°C to 175°C.

Feature Summary

• Utilizes Silicon Carbide Schottky technology for high-efficiency rectification
• Features zero reverse recovery time for fast switching applications
• Supports high junction temperatures up to 175°C

Applications

• High-frequency power supplies
• Inverter circuits
• DC-DC converters

Procurement Notes

Verify component authenticity against official SemiQ documentation due to End-of-Life status. Confirm that replacement parts meet identical electrical specifications and thermal requirements. Ensure compliance with RoHS3 standards if required by the target application environment.

Selection Notes

Select this component for designs requiring high-voltage blocking capability and minimal switching losses. The TO-247-2 package facilitates effective heat dissipation for continuous 20 A operation. Evaluate thermal management strategies to maintain junction temperatures within the specified -55°C to 175°C range during peak load conditions.

Part Context

This part belongs to the SemiQ Amp+ series of wide-bandgap semiconductor devices. It is designed to replace traditional silicon rectifiers in high-performance power electronics, offering superior efficiency and reliability under harsh operating conditions compared to conventional PN-junction diodes.

Replacement Considerations

GP3D020A170B is documented as a direct substitute.