GP2D030A120B

Overview

The GP2D030A120B is a 1200 V Silicon Carbide Schottky diode from the Amp+ series, housed in a TO-247-2L package. It supports a continuous forward current of up to 94 A at 25 °C case temperature and withstands repetitive peak reverse voltages of 1200 V. The device features a maximum total capacitive charge of 129 nC and a thermal resistance junction-to-case of 0.30 °C/W. Operating temperatures range from -55 °C to +175 °C.

Feature Summary

• Zero reverse recovery current for lossless switching
• High surge current capability with robust dv/dt ruggedness
• Temperature-independent switching characteristics
• Unipolar rectifier design ensuring high bandwidth operation

Applications

• Motor drives
• Switch mode power supplies
• Power factor correction

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure proper mounting torque specifications are met during installation to maintain thermal performance and mechanical integrity throughout the operational lifecycle.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the device's unipolar nature and zero reverse recovery characteristics when designing circuits demanding high efficiency and reduced electromagnetic interference.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky diodes manufactured by Global Power Technologies Group Inc. The series emphasizes high-speed switching and thermal stability, utilizing SiC technology to achieve superior performance compared to traditional silicon counterparts in high-voltage power electronics applications.

Replacement Considerations

No public confirmed substitute part numbers are available.