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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 60A TO2472
- Series：Amp+™
- Mfr：SemiQ
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：60A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 60 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：500 µA @ 1200 V
- Capacitance @ Vr, F：3809pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247-2
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The SemiQ GP2D060A120B is a 1200V Silicon Carbide Schottky diode in a TO-247-2L package. It features a continuous forward current of 60A at Tc<135°C and a maximum repetitive reverse voltage of 1200V. The device exhibits zero reverse recovery charge, with a typical total capacitive charge of 259nC. Forward voltage ranges from 1.6V to 1.8V at 60A and 25°C. Thermal resistance junction-to-case is 0.16°C/W, supporting power dissipation up to 938W at 25°C case temperature.
Feature Summary
- Unipolar rectifier design enabling zero switching loss and high bandwidth operation
- Temperature-independent fast switching characteristics for improved efficiency
- High surge current capability with thermal stability for parallel device configurations
Applications
- Motor drives
- Switch mode power supplies
- Power factor correction
Procurement Notes
Verify the specific manufacturer source, as datasheet references Global Power Technologies Group Inc., while distributor listings may attribute the part to SemiQ. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements before integration. Ensure mounting torque specifications for M3 screws are strictly adhered to during installation to maintain thermal performance and mechanical integrity.
Selection Notes
Select this component for applications requiring high dv/dt ruggedness up to 500 V/ns and minimal reverse leakage current. The TO-247-2L package facilitates screw mounting, suitable for industrial environments. Evaluate thermal derating curves for operating temperatures exceeding 25°C case conditions to ensure reliable continuous forward current handling within the specified junction temperature limits.
Part Context
This silicon carbide Schottky diode belongs to the Amp+ series, designed for high-efficiency power conversion. It utilizes unipolar technology to eliminate reverse recovery effects common in standard silicon diodes. The component is engineered for robust performance in demanding switching applications, offering superior thermal management compared to traditional alternatives.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the dv/dt rating of the GP2D060A120B?
The device supports a repetitive turn-on slew rate (dv/dt) of up to 500 V/ns.
Does this diode exhibit reverse recovery charge?
No, it is a unipolar Schottky rectifier with zero reverse recovery current and negligible total capacitive charge.
