GP2D060A120U

Description：DIODE ARR SIC 1200V 94A TO247-3
Series：Amp+™

SKU:cb9ea5e6c695 Category: Diode Arrays Brand: SemiQ

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：DIODE ARR SIC 1200V 94A TO247-3
Series：Amp+™
Mfr：SemiQ
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io) (per Diode)：94A (DC)
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 30 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：500 µA @ 1200 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

Download product information

GP2D060A120U

Overview

The GP2D060A120U is a 1200V Silicon Carbide Schottky Diode in a TO-247-3L package. It supports continuous forward currents of 30A at 25°C and 94A at 175°C junction temperature. The device features a maximum repetitive peak reverse voltage of 1200V, a typical total capacitive charge of 129nC, and a thermal resistance from junction to case of 0.30°C/W.

Feature Summary

Zero reverse recovery current for lossless switching
High surge current capability with robust i²t rating
Fast, temperature-independent switching characteristics
Parallel device compatibility due to positive thermal stability

Applications

Motor drives
Switch mode power supplies
Power factor correction

Procurement Notes

Verify the manufacturer designation as Global Power Technologies Group Inc. or GPTech Group based on the provided datasheet source. Confirm RoHS compliance status against EU Directive 2011/65/EC requirements. Ensure REACh SVHC declarations are obtained directly from the manufacturer's documentation section before finalizing procurement specifications.

Selection Notes

Select this component for high-frequency applications requiring zero reverse recovery charge. Evaluate thermal management needs using the 0.30°C/W junction-to-case resistance value. Consider the 1200V blocking voltage for high-voltage topologies. Verify that the TO-247-3L mounting style aligns with the target system's mechanical constraints.

Part Context

This part belongs to the Amp+ series of Silicon Carbide Schottky Diodes. It utilizes unipolar rectifier technology to eliminate switching losses associated with minority carrier recombination. The design focuses on high bandwidth operation and reduced heat sink requirements compared to traditional silicon alternatives.