GP2T080A120U

$6.13

Description：SIC MOSFET 1200V 80M TO-247-3L
Series：-
Mfr：SemiQ
Package：Tube

SKU:5521d72ab210 Category: Single FETs, MOSFETs Brand: SemiQ

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Product introduction

Product Detailed Parameters

Description：SIC MOSFET 1200V 80M TO-247-3L
Series：-
Mfr：SemiQ
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：58 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1377 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：188W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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GP2T080A120U

Overview

The SemiQ GP2T080A120U is a single-channel N-Channel Silicon Carbide (SiC) MOSFET designed for high-power switching applications. It features a 1.2 kV drain-source breakdown voltage and an on-resistance of 80 mOhms at room temperature. The device operates within a junction temperature range of -55°C to +175°C and supports gate-source voltages between -5 V and +20 V. Key electrical characteristics include a threshold voltage of 2.8 V, total gate charge of 58 nC, and power dissipation capability of 188 W. Switching performance includes a typical turn-on delay of 10 ns, rise time of 6 ns, turn-off delay of 16 ns, and fall time of 10 ns.

Feature Summary

Utilizes Silicon Carbide technology for enhanced thermal stability and high-voltage handling capabilities.
Provides low on-resistance to minimize conduction losses in power conversion circuits.
Features fast switching speeds with low gate charge for efficient high-frequency operation.

Applications

High-efficiency DC-DC converters
Industrial motor drives
Uninterruptible power supplies

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the TO-247-3 through-hole package matches the target PCB footprint and thermal management requirements. Ensure the operating voltage and current ratings align with the system design specifications to prevent overstress conditions during implementation.

Selection Notes

Select this component when a robust 1.2 kV SiC solution is required with moderate on-resistance. The TO-247-3 package facilitates reliable through-hole mounting for industrial environments. Consider the 175°C maximum junction temperature rating for high-thermal-stress applications where silicon-based alternatives may be insufficient.

Part Context

This part belongs to the SemiQ GP2T series of discrete Silicon Carbide MOSFETs. The series offers various voltage and resistance combinations tailored for power electronics. The GP2T080A120U specifically targets applications requiring a balance between low conduction loss and manageable gate drive complexity in the 1.2 kV class.